Nature of V-Shaped Defects in GaN

Defects in GaN Nanowires

High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission elect...

Spatially Varied Flow Profiles in a V-Shaped Side-Channel

A Comprehensive Model for Stiffness Coefficients in V-Shaped Cantilevers

   During past decade the AFM based nanomanipulation has been focus of attention as the promising nano fabrication approach. The main challenge in this process is the real-time monitoring. Consequently, the dynamic models have been proposed as a solution to the existing challenge. In the modeling approach the magnitudes of the forces are proportional to the stiffness coefficients o...

Resistance to Flow in a V-Shaped Bottom Channel

Water flow in open channels is always subject to the resistance to flow and energy dissipation. For design purposes, one of the needed variables is the hydraulic resistance coefficient. For this mean, the influence of cross-sectional shape together with secondary flow cells and lateral distribution of true boundary shear stress have not yet been fully explored. This paper surveys the number of ...

Nature of Mg impurities in GaN